FDN335N Description
This N−Channel 2.5 V specified MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
FDN335N Key Features
- 1.7 A, 20 V
- RDS(ON) = 0.07 W @ VGS = 4.5 V
- RDS(ON) = 0.1 W @ VGS = 2.5 V
- Low Gate Charge (3.5 nC typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This Device is Pb-Free and is RoHS pliant