FDN335N mosfet equivalent, n-channel mosfet.
* 1.7 A, 20 V
* RDS(ON) = 0.07 W @ VGS = 4.5 V
* RDS(ON) = 0.1 W @ VGS = 2.5 V
* Low Gate Charge (3.5 nC typical)
* High Performance Trench Technology.
* DC−DC Converter
* Load Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter.
This N−Channel 2.5 V specified MOSFET is produced using
onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
Features
* 1.7.
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